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ICOP & ICPET 2014, 20 - : 25-28 Back to browse issues page
Investigation of the Impact Ionization Effect In Graphene Nanoribbon-based Phototransistor
Mohsen Heidari Mr.1, Abbas Zarifkar Dr. * 1, Mohammad Hossein Sheikhi Dr.1
1- Shiraz University
Abstract:   (5642 Views)
In this paper we investigate the effect of impact ionization in graphene nanoribbon-based phototransitor for the first time.We consider a phototransistor based on an array of graphene nanoribbons in which the top gate and the back gate control the carrier multiplication and optical gain. Impact ionization and carrier multiplication occur in moderate drain voltages. So, elimination of the impact ionization in photocurrent calculation causes a big error.
Keywords: Carrier Multiplication, Graphene Nanoribbon, Impact Ionization, Phototransistor
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Type of Study: Research | Subject: Special
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Heidari M, Zarifkar A, Sheikhi M H. Investigation of the Impact Ionization Effect In Graphene Nanoribbon-based Phototransistor. ICOP & ICPET. 2014; 20 :25-28
URL: http://opsi.ir/article-1-41-en.html

Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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