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Volume 20 -                   ICOP & ICPET _ INPC _ ICOFS 2014, 20 - : 25-28 | Back to browse issues page

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Heidari M, Zarifkar A, Sheikhi M H. Investigation of the Impact Ionization Effect In Graphene Nanoribbon-based Phototransistor. ICOP & ICPET _ INPC _ ICOFS 2014; 20 :25-28
URL: http://opsi.ir/article-1-41-en.html
Investigation of the Impact Ionization Effect In Graphene Nanoribbon-based Phototransistor
Mohsen Heidari1 , Abbas Zarifkar *1 , Mohammad Hossein Sheikhi1
1- Shiraz University
Abstract:   (8332 Views)
In this paper we investigate the effect of impact ionization in graphene nanoribbon-based phototransitor for the first time.We consider a phototransistor based on an array of graphene nanoribbons in which the top gate and the back gate control the carrier multiplication and optical gain. Impact ionization and carrier multiplication occur in moderate drain voltages. So, elimination of the impact ionization in photocurrent calculation causes a big error.
Keywords: Carrier Multiplication, Graphene Nanoribbon, Impact Ionization, Phototransistor
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Type of Study: Research | Subject: Special
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