[Home ] [Archive]   [ فارسی ]  
:: Volume 20 - ::
ICOP & ICPET 2014, 20 - : 1177-1180 Back to browse issues page
Theoretical study of the electrical properties of Au/n-GaN Schottky diode
Zohreh Kordghasemi * 1, Hosein Eshghi
Abstract:   (10650 Views)
Abstract- In this research, we have studied the temperature dependence (100-350 K) of I-V characteristics in Au/n-GaN Schottky diode. Various quantities such as: barrier height (φb0), ideality factor (n) and series resistance (Rs) of the device are determined on the basis of a constant barrier height using thermionic emission theory (TE) by Chang's method. We found the extended thermionic emission theory considering an inhomogeneous (Gaussian distribution) barriers not only provide the preliminary theory results, but also lead to the correct value for the effective Richardsoncoefficient
Keywords: Shottky diode, n-GaN, Thermionic emission, Electrical characteristics, Inhomogeneous barrier theory
Full-Text [PDF 531 kb]   (720 Downloads)    
Type of Study: Research | Subject: Special
Send email to the article author

Add your comments about this article
Your username or Email:

CAPTCHA code
User comments
Comment sent by نام يا پست الكترونيك on 2014/06/26
با عرض سلام و خسته نباشید
مطالب بسیار مفید و کار امد بود. تشکر


XML   Persian Abstract   Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

kordghasemi Z, eshghi H. Theoretical study of the electrical properties of Au/n-GaN Schottky diode . ICOP & ICPET. 2014; 20 :1177-1180
URL: http://opsi.ir/article-1-408-en.html


Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
Persian site map - English site map - Created in 0.05 seconds with 30 queries by YEKTAWEB 3781