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kordghasemi Z, eshghi H. Theoretical study of the electrical properties of Au/n-GaN Schottky diode . ICOP & ICPET _ INPC _ ICOFS 2014; 20 :1177-1180
URL: http://opsi.ir/article-1-408-en.html
URL: http://opsi.ir/article-1-408-en.html
Abstract: (12986 Views)
Abstract- In this research, we have studied the temperature dependence (100-350 K) of I-V characteristics in Au/n-GaN Schottky diode. Various quantities such as: barrier height (φb0), ideality factor (n) and series resistance (Rs) of the device are determined on the basis of a constant barrier height using thermionic emission theory (TE) by Chang's method. We found the extended thermionic emission theory considering an inhomogeneous (Gaussian distribution) barriers not only provide the preliminary theory results, but also lead to the correct value for the effective Richardson
Keywords: Shottky diode, n-GaN, Thermionic emission, Electrical characteristics, Inhomogeneous barrier theory
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