[Home ] [Archive]   [ فارسی ]  
:: Volume 20 - ::
ICOP & ICPET 2014, 20 - : 249-252 Back to browse issues page
Structural and optical properties of CuFeO2 thin films produced by chemical solution deposition
Hafezeh Mamaghani 1, Majid Ghanaatshoar Dr. * 1
1- shahid beheshti university
Abstract:   (4996 Views)
Abstract- transparent conductive CuFeO2 thin films were deposited onto quartz substrate using chemical solution process and then thermally annealed in argon at 750°C. The derived thin films were characterized by x-ray diffraction. The transmission at visible region and direct optical band gap of the CuFeO2 thin films were 30-55 % and 3.2 eV, respectively. The Hall effect measurement showed that the electrical conductivity and carrier concentration of the films are 3.87×10-2 S/cm and 1.4×10 17 cm-3, respectively.
Keywords: CuFeO2, thin film, chemical solution deposition, transparent oxide semiconductor
Full-Text [PDF 557 kb]   (1258 Downloads)    
Type of Study: Research | Subject: Special
Send email to the article author

Add your comments about this article
Your username or Email:

CAPTCHA code


XML   Persian Abstract   Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

mamaghani H, ghanaatshoar M. Structural and optical properties of CuFeO2 thin films produced by chemical solution deposition. ICOP & ICPET. 2014; 20 :249-252
URL: http://opsi.ir/article-1-147-en.html


Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
Persian site map - English site map - Created in 0.05 seconds with 30 queries by YEKTAWEB 3781