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Parnia baran A, Abbasi S P, Sabrlouy B. Wet etching of GaAs wafers by phosphoric acid, hydrogen peroxide and methanol solution. ICOP & ICPET _ INPC _ ICOFS 2014; 20 :1545-1548
URL: http://opsi.ir/article-1-89-en.html
URL: http://opsi.ir/article-1-89-en.html
1- Iranian National Center for laser science and technology
Abstract: (7031 Views)
Wet chemical etching is one of the extensively process in the fabrication of optoelectronic devices such as semiconductor lasers. In this paper the GaAs wafer etched in phosphoric acid/ hydrogen peroxide/ methanol solution at 0-4°C by dipping. The results of this experiment were studied by Dek Tak surface profile meter that shows U anisotropic etching, depth 4600 A°, roughness about 17.4 A°. Presence of methanol in the etchant results in easy and controllable etching process.
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