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year 27, Issue 2 (ICOP & ICPET 2021 2021)
ICOP & ICPET _ INPC _ ICOFS 2021, 27(2): 805-808 |
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Abbasi S P, Givkey H, Razeghi F. Measurement of 808nm InAlGaAs/AlGaAs Diode Lasers Beam Quality. ICOP & ICPET _ INPC _ ICOFS 2021; 27 (2) :805-808
URL: http://opsi.ir/article-1-2484-en.html
URL: http://opsi.ir/article-1-2484-en.html
1- Iranian National Center for Laser Science and Technology, Tehran
Abstract: (853 Views)
Large divergence, asymmetry of the near and far field profiles, and astigmatism of the laser diode beam are reason of make it more difficult to apply than other beam lasers. The use of semiconductor laser beams in various applications requires the beam shaping and fiber coupling of beam. In this research, divergence was reduced by using asymmetric structure and increasing the thickness of the waveguide layer by controlling the transverse modes without reducing the beam quality. Also in this paper, an arrangement for measuring the beam quality is introduced, which can be used with a very suitable approximation.
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