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year 27, Issue 2 (ICOP & ICPET 2021 2021)
ICOP & ICPET _ INPC _ ICOFS 2021, 27(2): 581-584 |
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Abbasi F, Ghorashi S M B, Karimzadeh E. Investigation of Optoelectronic Characteristics of Organic Emission Diode Based on ITO/MoO3/NPB/Alq3: DCJTB/Alq3/LiF/Al Heterostructure. ICOP & ICPET _ INPC _ ICOFS 2021; 27 (2) :581-584
URL: http://opsi.ir/article-1-2432-en.html
URL: http://opsi.ir/article-1-2432-en.html
1- Department of Laser and Photonics Faculty of Physics University of Kashan, Kashan
2- Department of Materials Engineering, Isfahan University of Technology, Isfahan
2- Department of Materials Engineering, Isfahan University of Technology, Isfahan
Abstract: (844 Views)
In this research, optoelectronic properties of OLED structure consisting ITO/MoO3/NPB/Alq3: DCJTB/Alq3/LiF/Al layers was investigated. OLEDs with host-guest layer (Alq3: DCJTB) were simulated with the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. In reference sample (without guest), the emission wavelength was appeared at 520 nm. Then, the effect of the presence the guest in host layer (Alq3: DCJTB) with different weight percent (1, 5 and 10 %w) was simulated. The results were showed that the emission wavelength was shifted to 630 nm. Also, the OLED structure with Alq3: DCJTB (5%w) layer had a better current efficiency than other samples. Improvement of optical performance of the host-guest OLED structures is due to the increase of electrons and holes between Alq3: DCJTB and Alq3 layers which lead to raise the radiative recombination rate and improve current efficiency.
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