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Volume 25 - ICOP & ICPET 2019
ICOP & ICPET _ INPC _ ICOFS 2019, 25 - ICOP & ICPET 2019: 821-824 |
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Gholipour M, Fathi D, Gordi armaki M. Theoretical analysis of Ge/Si quantum dot infrared photodetector. ICOP & ICPET _ INPC _ ICOFS 2019; 25 :821-824
URL: http://opsi.ir/article-1-1916-en.html
URL: http://opsi.ir/article-1-1916-en.html
Abstract: (1547 Views)
In the article, we have used an accurate model for theoretical studying of dark and illumination characteristics of Ge/Si quantum dot infrared photodetector. In our considerations it is assumed that both thermionic emission and field-assisted tunnelling mechanisms determine the dark current of quantum dot detector. Dependence of the QDIPs dark current to the temperature and voltage bias, and also the thermionic emission and field-assisted tunneling at various temperatures and biasing voltages are investigated. Our results predict that the dark current of Ge/Si quantum dot is smaller than other materials of Ⅲ-Ⅴ groups such as InAs/GaAs and as a result, detectivity in photodetectors can be improved.
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