[Home ] [Archive]   [ فارسی ]  
:: Volume 24 - ::
ICOP & ICPET 2018, 24 - : 145-148 Back to browse issues page
Simulation and design of a photoconductive self-bias antenna based on GaN with dis-similar schottky contacts
Pouya Torkaman * 1, Sara Darbari 1, Mohammad Javad Mohammad Zamani 1
1- Tarbiat modares university,Tehran
Abstract:   (212 Views)
in this paper we introduce a photoconductive terahertz antenna. This emitter consists of asymmetric Schottky contacts on GaN layer, inducing an internal electric field. By radiating a short pulse with the wavelength of 350 nm, carriers are generated in the photoconductive active region. Rapid transition in the incident laser pulse, results in generation of high frequency components in the generated electric current. The resulted time varying current generates the THz radiation toward the bottom of the device.
 
Keywords: GaN- photoconductive- self-bias- antenna- terahertz.
Full-Text [PDF 1001 kb]   (77 Downloads)    
Type of Study: Research | Subject: Special
Add your comments about this article
Your username or Email:

CAPTCHA code


XML   Persian Abstract   Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Torkaman P, Darbari S, Mohammad Zamani M J. Simulation and design of a photoconductive self-bias antenna based on GaN with dis-similar schottky contacts. ICOP & ICPET. 2018; 24 :145-148
URL: http://opsi.ir/article-1-1626-en.html


Volume 24 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
Persian site map - English site map - Created in 0.05 seconds with 30 queries by YEKTAWEB 3772