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ICOP & ICPET 2018, 24 - : 77-80 Back to browse issues page
Fabrication of black silicon by using femtosecond laser pulses at various fluencies
Reza Goodarzi *1, Fereshteh Hajiesmaeilbaigi1, Eftekhar Bostandoost1, Hossein Razaghi1, Asma Motamedi1
1- Photonics and Quantum Technologies Research School, NSTRI
Abstract:   (847 Views)

In this research, a silicon wafer has been irradiated by femtosecond laser pulses. Laser fluence is studied as an important parameter. The reflection spectrum of the surface at three different fluencies 1, 3 and 9 KJ/m2 has been recorded after 1-minute irradiation. The results are shown that at low laser fluence the efficient ablation did not take place and the surface reflection did not change. However, when the laser fluence reaches to ionic plasma formation threshold, the laser ablation is occurring that cause spikes formation on the silicon surface. The changes in the surface structure result in reflection decreases. In conclusion, by laser irradiation of silicon surface with laser fluence more than the threshold the black silicon is fabricated which due to its high absorption can improve the manufacture of solar cell technology.

Keywords: Ultrashort pulse laser, surface reflection, black silicon, laser ablation
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Type of Study: Research | Subject: Special
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Goodarzi R, Hajiesmaeilbaigi F, Bostandoost E, Razaghi H, Motamedi A. Fabrication of black silicon by using femtosecond laser pulses at various fluencies. ICOP & ICPET. 2018; 24 :77-80
URL: http://opsi.ir/article-1-1511-en.html

Volume 24 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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