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ICOP & ICPET 2017, 23 - : 1113-1116 Back to browse issues page
Technical Characteristics Improvement of Multiple Quantum Well Semiconductor Slow Light Devices Based on Excitonic Population Oscillations
Saeed Abdolhosseini * 1, Hassan Kaatuzian 1, Bahram Choupanzadeh 1, Reza Kohandani 1
1- Amirkabir University of Technology
Abstract:   (851 Views)

This article indicates the effects of physical dimensions variations on optical properties of GaAs/AlGaAs multiple quantum well (MQW) slow light devices based on coherent population oscillations (CPO) method. These physical parameters include, quantum well size and number. Bloch equations have been used to analyze and simulate the device with different parameters. This paper offers several methods for tuning the central frequency and slow down factor (SDF) of the slow light device. Based on these proposed approaches, we could improve optical properties of MQW slow light devices. According to simulation results, the maximum value of SDF can be achieved in a range of 3×105 with variations of physical parameters.

Keywords: quantum wells number, quantum wells size, multiple quantum well, slow light device, coherent population oscillations.
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Type of Study: Research | Subject: Special
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Abdolhosseini S, Kaatuzian H, Choupanzadeh B, Kohandani R. Technical Characteristics Improvement of Multiple Quantum Well Semiconductor Slow Light Devices Based on Excitonic Population Oscillations. ICOP & ICPET. 2017; 23 :1113-1116
URL: http://opsi.ir/article-1-1214-en.html


Volume 23 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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