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Shahi-Vazifeh M R, Mansouri-Birjandi M A. Efficiency Improve and Absorption Enhancement of Metal-Semiconductor-Metal (MSM) Phototransistor Based on Plasmonic Metal Nanogratings . ICOP & ICPET _ INPC _ ICOFS 2016; 22 :272-275
URL: http://opsi.ir/article-1-1104-en.html
URL: http://opsi.ir/article-1-1104-en.html
1- University of Sistan and Baluchestan
Abstract: (3384 Views)
In this article, a metal-semiconductor-metal phototransistor (MSM) is simulated with numerical finite element method using sub-wavelength aperture, nanograting and nanoparticles. Simulation results show that surface plasmons to be excited just with TM electromagnetic wave and a radiation angle of about 0. 25 radian, and by selecting the GaAs material as a substrate, can be seen the greatest amount of absorption(&alpha=0.58). Considering MSM photodiode is single-carrier (type n), the p-type substrate is used in this structure to create amplify features (performance of transistor).
Keywords: Metal-Semiconductor-Metal (MSM) Phototransistor, Metal-Semiconductor-Metal Photodiode (MSM-PD), Surface Plasmon-Polariton (SPP), Surface Plasmon Wave (SPW), Nanograting
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