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ICOP & ICPET 2015, 21 - : 653-656 Back to browse issues page
Analysis of Effect of Number of Quantum Dot Layers on Static Characteristics InAs/InP Quantum Dot Laser
Gholamreza Babaabasi * 1, Ali Mir , Mohammad-Hasan Yavari
Abstract:   (2144 Views)
In this paper the behavior of InAs/InP quantum dot semiconductor lasers in 1.55µm by considering excited and ground state and effects gain homogeneous broadening and inhomogeneous broadening will be simulate by implementing rate equations. The simulation results indicates increasing in injected current when direct relaxation channel between wetting state and ground state is considered, there is no effect of ground state saturation. In addition, the excited state lasing will appear in 1.42µm. in the following, by examining the number of quantum dot layers, the quantum efficiency will enhance by increase in quantum dot layers but the threshold current will increase too.
Keywords: Gain optical, Inhomogeneous broadening, Quantum dot laser, Rate equations
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Type of Study: Research | Subject: Special
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babaabasi G, mir A, Yavari M. Analysis of Effect of Number of Quantum Dot Layers on Static Characteristics InAs/InP Quantum Dot Laser. ICOP & ICPET. 2015; 21 :653-656
URL: http://opsi.ir/article-1-761-en.html


Volume 21 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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