Association Mission
The mission of the association is to advance the creation, communication and application of knowledge to benefit society and improve people's lives.
Legal Members
Membership
Contact Us
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
annabi milani E, asgari A. The Effects of Structural Parameters of GaN Based Asymmetric Doubled Quantum Wells on Optical Gain in Laser Diodes. ICOP & ICPET _ INPC _ ICOFS 2015; 21 :29-32
URL: http://opsi.ir/article-1-708-en.html
URL: http://opsi.ir/article-1-708-en.html
1- tabriz university
Abstract: (5235 Views)
In this paper, the optical gain of GaN doubled asymmetric quantum well based laser diode has been investigated. The rate of optical gain in the structure of doubled quantum wells with different structural parameters is considered. The optical gain is obtained for different values of aluminum mole fraction, variations of quantum well thickness and central quantum barrier width from 1 nm to 5 nm. The results of our calculations show that increasing the width of the central barrier and the doubled quantum well will decrease the optical gain.
Keywords: Optical gain, Diode laser, Double quantum well, Quantum barrier, Nitride material, Asymmetric
Send email to the article author
| Rights and permissions | |
 |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. |
