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ICOP & ICPET 2014, 20 - : 705-708 Back to browse issues page
Effect of indium percentage on energy levels of pyramidal In_x Ga_(1-x) As quantum dots on GaAs substrate
Mahdi Ahmadi Borji Mr * 1, Esfandiar Rajaei Dr., Kaveh Kayhani Mr
Abstract:   (3328 Views)
Abstract- In this paper, we have studied the bandedge and energy levels of pyramidal InGaAs based quantum dots (QDs) surrounded by GaAs. We show that by changing the In ratio rather than Ga in the QD, not only the allowed energy states increase, but also the conduction and valence bandedges get closer to each other. We even show that the radiation wavelength get longer. Our results appear to coincide with former researches.
Keywords: Strain, bandedge, nano-electronics, quantum dots
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Type of Study: Research | Subject: Special
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Ahmadi Borji M, Rajaei E, Kayhani K. Effect of indium percentage on energy levels of pyramidal In_x Ga_(1-x) As quantum dots on GaAs substrate. ICOP & ICPET. 2014; 20 :705-708
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Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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