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ICOP & ICPET 2014, 20 - : 505-508 Back to browse issues page
A New Structure for Multi Quantum Well InGaN/GaN Light Emitting Diodes with Emission Wavelength of 400-450 nm
Arman Rashidi Mr * 1, Mohammad Hossein Sheikhi Dr.2, Abbas Zarifkar Dr.3
1- Photonics Laboratory, School of Electrical and Computer Engineering, Shiraz University
2- Nanotechnology Research Institute, Shiraz University
3- Department of Communications and Electronics, School of Electrical and Computer Engineering, Shiraz University
Abstract:   (2716 Views)
In this paper a new structure for InGaN/GaN multi quantum well (MQW) light emitting diodes (LEDs) with emission wavelengths of 400-450 nm and peak wavelength at 435 nm is reported. In this configuration a tri-step quantum wells have been considered that high quantum efficiency up to 80% was obtained. Since carriers would experience more cross-section of the localized states at outer well, both short wavelength emission and stable quantum efficiency have been observed.
Keywords: Light emitting diode, multi quantum well, optical spectral response, quantum efficiency.
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Type of Study: Research | Subject: Special
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Rashidi A, Sheikhi M H, Zarifkar A. A New Structure for Multi Quantum Well InGaN/GaN Light Emitting Diodes with Emission Wavelength of 400-450 nm. ICOP & ICPET. 2014; 20 :505-508
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Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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