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Rashidi A, Sheikhi M H, Zarifkar A. A New Structure for Multi Quantum Well InGaN/GaN Light Emitting Diodes with Emission Wavelength of 400-450 nm. ICOP & ICPET _ INPC _ ICOFS 2014; 20 :505-508
URL: http://opsi.ir/article-1-243-en.html
URL: http://opsi.ir/article-1-243-en.html
1- Photonics Laboratory, School of Electrical and Computer Engineering, Shiraz University
2- Nanotechnology Research Institute, Shiraz University
3- Department of Communications and Electronics, School of Electrical and Computer Engineering, Shiraz University
2- Nanotechnology Research Institute, Shiraz University
3- Department of Communications and Electronics, School of Electrical and Computer Engineering, Shiraz University
Abstract: (4925 Views)
In this paper a new structure for InGaN/GaN multi quantum well (MQW) light emitting diodes (LEDs) with emission wavelengths of 400-450 nm and peak wavelength at 435 nm is reported. In this configuration a tri-step quantum wells have been considered that high quantum efficiency up to 80% was obtained. Since carriers would experience more cross-section of the localized states at outer well, both short wavelength emission and stable quantum efficiency have been observed.
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