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ICOP & ICPET 2014, 20 - : 1321-1324 Back to browse issues page
The effect of position of the Defect layer on the Goos – Hanchen Shift in the 1D Photonic Crystals in the Presence of Metamaterial
Hedayat Pourasiab Mr * 1, Abdolrahman Namdar Mr
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Abstract- In this paper we study the effect of position of the defect layer on the Goos-Hanchen shift in the one-dimensional photonic crystal in the presence of metamaterial. We show that the Goos-Hanchen shift will be positive or negative depending on the excitation of the forward or backward surface waves. Also, we observe that the maximum Goos-Hanchen shift for different position of defect layer will take place in different incident angles of Gaussian beam. So that these angles in the case of forward ( backward) waves decrease (increase) from high( low) values toward the angle corresponding to without defect layer case by removing the defect layer from surface of crystal .
Keywords: Photonic Crystal, Goos-Hanchen Shift, Metamaterial.
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Type of Study: Research | Subject: Special
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pourasiab H, namdar A. The effect of position of the Defect layer on the Goos – Hanchen Shift in the 1D Photonic Crystals in the Presence of Metamaterial . ICOP & ICPET. 2014; 20 :1321-1324
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انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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