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Volume 26 - ICOP & ICPET 2020
ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 1125-1128 |
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Noroozian Alam S, Zubialevich V, Ghafary B, Parbrook P. Optical and Compositional properties of Indium Aluminium Nitride as a New Active Material for Light Emitting Applications. ICOP & ICPET _ INPC _ ICOFS 2020; 26 :1125-1128
URL: http://opsi.ir/article-1-2204-en.html
URL: http://opsi.ir/article-1-2204-en.html
1- 2. Photonics Centre, Tyndall National Institute, Cork, Ireland
2- 1. Physics Department, Iran University of Science & Technology, Tehran, Iran
2- 1. Physics Department, Iran University of Science & Technology, Tehran, Iran
Abstract: (1566 Views)
Among all III-Nitride materials Indium Aluminium Nitride (InAlN) is an important but challenging material system used in many applications including InAlN/GaN high electron mobility transistors, InAlN/GaN Bragg reflectors and InAlN-based photodetectors. Despite this, a significant discrepancy (±0.3 eV) exists in the band-gaps reported for even the most studied and technologically relevant compositions, around the lattice matched condition to GaN. For accurate estimation of band-gap across the whole composition range, a detailed data set for the lowest indium content region is needed, but has not been available. Here InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350 nm have been prepared by metalorganic organic chemical vapor deposition (MOCVD) on planar AlN templates. Also we studied InAlN epitaxial layers grown on AlN by MOVPE at different temperatures and determined their band-gap Eg by means of photoluminescence excitation spectroscopy.
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