[Home ] [Archive]   [ فارسی ]  
:: Volume 26 - ICOP & ICPET 2020 ::
ICOP & ICPET 2020, 26 - ICOP & ICPET 2020: 585-588 Back to browse issues page
Effect of 60Co γ-irradiation at very low dose rate on n-GaN UV photodetector for space applications
Leyla Barghamadi *1, Shahab Norouzian Alam1, Seyed Hassan Sedighy1, Bijan Ghafary1
1- Iran University of Science and Technology, Tehran, Iran
Abstract:   (114 Views)
GaN MSM UV photodetector were fabricated on n-GaN epitaxial layer. The effect of room temperature 60Co γ-radiation at very low dose rate (0.0001 rad(Si)/s) on the electric current of photodetector was studied. In contrast to earlier observations, by increasing the gamma dose, an initial increasing of the dark current followed by the gradual decrease has been observed. The abnormal behavior of the voltage-current characteristic of the photodetector can be explained by considering the carriers transfer mechanism in localized states, which is very common in III-Nitride semiconductors. The results presented here are found to be important in understanding the mechanism of interaction of  60Co γ-irradiation with n-GaN epilayer.
Keywords: photodetector, GaN, gamma, dark current.
Full-Text [PDF 413 kb]   (14 Downloads)    
Type of Study: Research | Subject: Special


XML   Persian Abstract   Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Barghamadi L, Norouzian Alam S, Sedighy S H, Ghafary B. Effect of 60Co γ-irradiation at very low dose rate on n-GaN UV photodetector for space applications. ICOP & ICPET. 2020; 26 :585-588
URL: http://opsi.ir/article-1-2125-en.html


Volume 26 - ICOP & ICPET 2020 Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
Persian site map - English site map - Created in 0.07 seconds with 30 queries by YEKTAWEB 4142