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ICOP & ICPET 2014, 20 - : 413-416 Back to browse issues page
The influence of nitrogen content on the physical properties Cu3N thin films Produced by DC Magnetron Sputtering
Abdolrahman Darvishpour Mr * 1, Ali Ghahremani Mr1
1- Sahand University of Technology
Abstract:   (3852 Views)
In this experiment, the semiconducting Cu3N films were deposited on glass substrates by reactive Direct Current Magnetron Sputtering in a mixture gas of Nitrogen and Argon. The influence of nitrogen content in a fixed total sputtering gaz flow on the preferential crystalline orientation, the morphology, the conductivity properties of the copper nitride films were investigated by X-Ray Diffraction (X-RD) , Atomic Force microscopy (AFM) and Four-point probe techniques respectively.
Keywords: Thin film, Cu3N, DC magnetron sputtering, Four-point probe, Atomic Force Microscopy
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Type of Study: Research | Subject: Special
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Darvishpour A, Ghahremani A. The influence of nitrogen content on the physical properties Cu3N thin films Produced by DC Magnetron Sputtering. ICOP & ICPET. 2014; 20 :413-416
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Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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