Volume 24 -                   ICOP & ICPET _ INPC _ ICOFS 2018, 24 - : 145-148 | Back to browse issues page

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Simulation and design of a photoconductive self-bias antenna based on GaN with dis-similar schottky contacts
Pouya Torkaman * 1, Sara Darbari1 , Mohammad Javad Mohammad Zamani1
1- Tarbiat modares university,Tehran
Abstract:   (2110 Views)
in this paper we introduce a photoconductive terahertz antenna. This emitter consists of asymmetric Schottky contacts on GaN layer, inducing an internal electric field. By radiating a short pulse with the wavelength of 350 nm, carriers are generated in the photoconductive active region. Rapid transition in the incident laser pulse, results in generation of high frequency components in the generated electric current. The resulted time varying current generates the THz radiation toward the bottom of the device.
 
Keywords: GaN- photoconductive- self-bias- antenna- terahertz.
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Type of Study: Research | Subject: Special
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