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ICOP & ICPET 2018, 24 - : 821-824 Back to browse issues page
Design and Characterization of a Novel Silicon Optical modulator
Shahrzad Khajavi * 1, Mohammad Azim Karami 1
1- School of Electrical Engineering, Iran University of Science and Technology
Abstract:   (261 Views)
A new structure for the carrier depletion based silicon optical modulator is proposed with the extinction ratio of 7.81 dB and the low optical loss of 0.56 dB/mm at 9 V reverse bias. The modulator uses 100nm of heavily doped regions for each ohmic contact. The Modulator itself is designed with low impurity concentration doping profile in the active area as the phase shifter in order to reduce the optical loss. The eye diagram shows the jitter performance of 7.13 ps and the decision point of 22.07 ps.
Keywords: carrier depletion, plasma dispersion effect, silicon optical modulator
Full-Text [PDF 597 kb]   (85 Downloads)    
Type of Study: Research | Subject: Special
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Khajavi S, Karami M A. Design and Characterization of a Novel Silicon Optical modulator. ICOP & ICPET. 2018; 24 :821-824
URL: http://opsi.ir/article-1-1572-en.html


Volume 24 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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