Volume 20 -                   ICOP & ICPET _ INPC _ ICOFS 2014, 20 - : 249-252 | Back to browse issues page

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Structural and optical properties of CuFeO2 thin films produced by chemical solution deposition
Hafezeh Mamaghani1 , Majid Ghanaatshoar * 1
1- shahid beheshti university
Abstract:   (7277 Views)
Abstract- transparent conductive CuFeO2 thin films were deposited onto quartz substrate using chemical solution process and then thermally annealed in argon at 750°C. The derived thin films were characterized by x-ray diffraction. The transmission at visible region and direct optical band gap of the CuFeO2 thin films were 30-55 % and 3.2 eV, respectively. The Hall effect measurement showed that the electrical conductivity and carrier concentration of the films are 3.87×10-2 S/cm and 1.4×10 17 cm-3, respectively.
Keywords: CuFeO2, thin film, chemical solution deposition, transparent oxide semiconductor
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Type of Study: Research | Subject: Special
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