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ICOP & ICPET 2017, 23 - : 425-428 Back to browse issues page
Radiation Effect Modeling in 180nm Complementary Metal–Oxide–Semiconductor (CMOS) Image Sensors
Kiarash Hassas Irani Mr * 1, Abdollah Pil-Ali Mr, Mohammad Azim Karami Dr
Abstract:   (1207 Views)

A new model is developed for the radiation effect analysis in 180 nm CMOS implemented image sensors. The modeling is based on the quantization of interface states and oxide traps charges. For the verification of developed model two different structures are used for comparing the radiation affected results. The verification results show 3% average mismatch between simulated model and the experimental result in dark current of image sensors after the radiation. The model can be used for similar image sensors to be developed on the same technology (180nm CMOS).

Keywords: Total Ionizing Dose effect, Oxide traps, Interface states, 180nm CMOS technology.
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Type of Study: Research | Subject: Special
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Hassas Irani K, Pil-Ali A, Karami M A. Radiation Effect Modeling in 180nm Complementary Metal–Oxide–Semiconductor (CMOS) Image Sensors. ICOP & ICPET. 2017; 23 :425-428
URL: http://opsi.ir/article-1-1332-en.html

Volume 23 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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