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ICOP & ICPET 2014, 20 - : 213-216 Back to browse issues page
Simulation of modulation bandwidth in InAS/InP quantum dot lasers by using circuit-level modeling
Mohammad Reza Mansouri Mr. *1, Samaneh Gholamhosseini Mrs2, Abolghasem Mohammadi Mr1, Saeid Khodaparast Mr.1
1- Islamic Azad University lamerd branch
2- University of Guilan
Abstract:   (4040 Views)
In this paper, we present a circuit model of quantum dot lasers (QDLs) based on the rate equations. The simulation results show that effect of size fluctuation (due to inhomogeneous broadening) and carrier relaxation on the modulation bandwidth of the laser are taken into account. Slow carrier relaxation from the excited-state to the ground-state limits the modulation bandwidth to ~8GHz even for high model gain. We found that reducing size fluctuation increases the modulation bandwidth at low operating current but the maximum saturated bandwidth is limited to 8 GHz. Besides, we found that the modulation bandwidth strongly depends on the energy separation between the ground and excited states.
Keywords: Modulation bandwidth, Quantum dot lasers, Rate equation, Circuit model.
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Type of Study: Research | Subject: Special
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Mansouri M R, gholamhosseini S, Mohammadi A, khodaparast S. Simulation of modulation bandwidth in InAS/InP quantum dot lasers by using circuit-level modeling. ICOP & ICPET. 2014; 20 :213-216
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انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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