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ICOP & ICPET 2017, 23 - : 861-864 Back to browse issues page
Persistent Photoconductivity Effect in p-Si/SiGe/Si Inverted Remote Modulation Structure
Maryam Gholizadeh Arashti *
Yadegar-e-Imam Khomeini (RAH) Shahre Rey Branch, Islamic Azad University,
Abstract:   (828 Views)

In this paper, the persistent photoconductivity effect of p-Si/SiGe/Si inverted modulation doped structure grown with molecular beam epitaxy method was  investigated.  A two dimensional hole gas  with areal density nh was observed in the alloy layer off these structures which its density  can be changed by illumination with LED. The experimental results   of Hall effect measurement experiment indicated that  illumination of the sample by red light in AWT IMAGEtemperature, leads to enhancing the two dimensional hole gas density and its electrical conductivity. This effect is a consequence of neutralizing the Si surface charges due to photo absorption in the Si cap and electron-hole pairs generation.

Keywords: Inverted remote modulation structure, Photoconductivity, Two dimensional hole gas.
Full-Text [PDF 601 kb]   (217 Downloads)    
Type of Study: Research | Subject: Special
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gholizadeh M. Persistent Photoconductivity Effect in p-Si/SiGe/Si Inverted Remote Modulation Structure . ICOP & ICPET. 2017; 23 :861-864
URL: http://opsi.ir/article-1-1246-en.html


Volume 23 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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