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Salamatizadeh R, Adelifard M, Ketabi S A. Investigation on structural, morphological and optical properties of WO3/WS2 compound semiconductor thin films. ICOP & ICPET _ INPC _ ICOFS 2016; 22 :200-203
URL: http://opsi.ir/article-1-1114-en.html
URL: http://opsi.ir/article-1-1114-en.html
1- Damghan university
Abstract: (2977 Views)
WO3/WS2 compound thin films were prepared on glass substrate using chemical spray pyrolysis and annealing process in the Argon and H2S atmosphere. Structural, morphological and optical properties of the layers were investigated by X-ray diffractometer (XRD), field effect scanning electron microscopy (FESEM) and UV.Vis spectrophotometer. WO3/WS2 thin films have monoclinic oxide and hexagonal sulfide phases and approximately homogeneous Surface. Absorption coefficient of the layers in the visible region are of order 104 cm-1 and direct band gap of oxide and sulfide phases were calculated about 3.22 and 2.49 eV, respectively
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