[Home ] [Archive]   [ فارسی ]  
:: Volume 20 - ::
ICOP & ICPET 2014, 20 - : 1649-1652 Back to browse issues page
A Proposal for Design, Simulation and formation of a 0.45 μm thick Oxide on a Silicon Wafer
Elyar Pourali Mr. * 1, Mohammad Daraie Mr.2, Ramin Asadi Mr.3
1- Tarbiat Modares University
2- Pyame-Noor University
3- Azad University of Damavand
Abstract:   (1969 Views)
In this paper we propose a method for formation of a 0.45 μm thick oxide on a 4 inch silicon wafer. We show that the simulation results are in very good agreement with practical process. We have used Athena TCAD package, Centrotherm oxidation tubes and optical microscope and α-step thickness measuring devices to simulate, fabricate and testing of the oxide.
Keywords: Oxidation, silicon
Full-Text [PDF 699 kb]   (632 Downloads)    
Type of Study: Research | Subject: Special
Send email to the article author

Add your comments about this article
Your username or Email:

CAPTCHA code


XML   Persian Abstract   Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Pourali E, Daraie M, Asadi R. A Proposal for Design, Simulation and formation of a 0.45 μm thick Oxide on a Silicon Wafer. ICOP & ICPET. 2014; 20 :1649-1652
URL: http://opsi.ir/article-1-100-en.html


Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
Persian site map - English site map - Created in 0.07 seconds with 30 queries by YEKTAWEB 3781