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Ghezelayagh M, sabet Dariani R. Fabrication of porous silicon at different porosities for optical conductive applications. ICOP & ICPET _ INPC _ ICOFS 2016; 22 :640-643
URL: http://opsi.ir/article-1-988-en.html
URL: http://opsi.ir/article-1-988-en.html
1- Alzahra University
Abstract: (2749 Views)
Porous silicon has many applications in optoelectronics industry especially in light emitting diodes and solar cells. In this paper, porous silicon was made from p-type silicon under current densities of 20, 25, 30, and 35 mA/cm2 with constant etching time and electrolyte concentration at anodizing process. Porosity and thickness of layers were measured by SEM images and Digimizer software. According to our results, porosity and thickness of layers increase with increasing etching current density.
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