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Pourali E, Asadolahi Baboli M, Moravvej-Farshi M, Ebnali-Heidari M. Low dispersion slow light regime in hole-type photonic crystal waveguides by means of filling of air holes with Silicon Nitride. ICOP & ICPET _ INPC _ ICOFS 2015; 21 :1587-1590
URL: http://opsi.ir/article-1-793-en.html
URL: http://opsi.ir/article-1-793-en.html
1- Department of Organic Colorants, Institute for Color Science and Technology, Tehran
2- Faculty of Electrical and Computer Engineering, Islamic Azad University, Science and Research Branch, Tehran, Iran
3- Faculty of Electrical and Computer Engineering, Advanced Device Simulation Lab, Tarbiat Modares University, PO Box 14115-194, Tehran, 1411713116 Iran.
4- Faculty of Engineering, Shahrekord University, Shahrekord 8818634141, Iran
2- Faculty of Electrical and Computer Engineering, Islamic Azad University, Science and Research Branch, Tehran, Iran
3- Faculty of Electrical and Computer Engineering, Advanced Device Simulation Lab, Tarbiat Modares University, PO Box 14115-194, Tehran, 1411713116 Iran.
4- Faculty of Engineering, Shahrekord University, Shahrekord 8818634141, Iran
Abstract: (2708 Views)
Abstract- In this paper, we have achieved low dispersion (β2<250) slow light regime (ng=24.89, ng×Δω/ωc=0.219) in a W09 photonic crystal slab waveguide by means of filling of the air holes with Silicon Nitride (Si3N4), theoretically. Photonic crystal waveguide with the lattice constant ɑ, consists of air holes of radii r=0.3ɑ with hexagonal arrangement in a background of Silicon. Si3N4 rods are grown inside the air holes of 2 rows adjacent to the waveguide on both sides. 3D-FDTD method is employed to calculate the results.
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