Optics and Photonics Society of Iran

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

---

Silicon is often considered ideal in research, while its more realistic form has defects, such as in the volume of the silicon layer or at the interface with other layers that affect cell performance. In this study, we first simulated the optical part of a thin layer silicon cell (new generation silicon cell with a thickness of 3 microns) which has an anti-reflective coating with a thickness of 46, 82, and 112 nm by FDTD method. To simulate the electrical part, three states including ideal silicon, silicon with volume defect, and silicon with both simultaneous volumetric defects and at the interface with other layers, have been considered. For this purpose, three methods of radiative recombination, Auger recombination, and recombination by defects were considered. The results of electro-optical simulation showed that the performance of the more real silicon cell than the ideal one is significantly reduced so that even at the best thickness of the anti-reflective layer(82 nm) leads to a reduction of about 50% in cell efficiency compared to the ideal cell.

Keywords: thin film silicon solar cell, Bulk defect, Interface defect, electro-optical simulation.

Full-Text [PDF 1435 kb]   (527 Downloads)    

---