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year 27, Issue 2 (ICOP & ICPET 2021 2021)
ICOP & ICPET _ INPC _ ICOFS 2021, 27(2): 818-821 |
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Talouneh K, Eslami M, Kheradmand R. The Effect of Carrier Diffusion on Statistics and Characteristics of 2D Rogue Waves in Semiconductor Lasers with Saturable Absorber. ICOP & ICPET _ INPC _ ICOFS 2021; 27 (2) :818-821
URL: http://opsi.ir/article-1-2487-en.html
URL: http://opsi.ir/article-1-2487-en.html
1- Institute for applied Physics and Astronomy, University of Tabriz, Tabriz
2- Department of Physics, Faculty of Science, University of Guilan, Rasht
2- Department of Physics, Faculty of Science, University of Guilan, Rasht
Abstract: (853 Views)
In this paper, the effect of carrier diffusion on statistics and characteristics of 2D rogue waves in semiconductor lasers with saturable absorber had been studied. By this way, first by introducing the model equations describing electric field and carrier population dynamics and parameters involved, the system ability to generate these type of waves is investigated and then dependence of rogueness and Kurtosis related to statistical data that determine these type of waves, on carrier diffusion coefficient in active and passive media has been studied. In the following, by introducing the relationship describing correlation between each point of output transverse plane and another ones, the reasons to dependence of statistics and characteristics of rogue waves on carrier diffusion coefficient is investigated.
Keywords: Semiconductor laser, Rogue wave, Saturable absorber, Carrier diffusion coefficient, Rogueness of rogue wave
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