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Volume 26 - ICOP & ICPET 2020
ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 449-452 |
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Nasiri A, Zandi Goharrizi A, Safari H, Alahyarizadeh G. Study of the effect of AlGaN electron blocking layer on the characteristics of InGaN/GaN MQW solar cells. ICOP & ICPET _ INPC _ ICOFS 2020; 26 :449-452
URL: http://opsi.ir/article-1-2085-en.html
URL: http://opsi.ir/article-1-2085-en.html
1- Graduate University of Advanced Technology, Kerman
2- Engineering Department, Shahid Beheshti University, Tehran
2- Engineering Department, Shahid Beheshti University, Tehran
Abstract: (1540 Views)
In this paper, to investigate the effect of AlGaN electron blocking layer (EBL) on the characteristics of InGaN/GaN multi-quantum-well solar cells, at first this structure without EBL layer was simulated using Silvaco-atlas software and efficiency of 27.80% was achieved. Then by inserting a 20nm p-Al0.1Ga0.9N electron blocking layer the cell characteristics was evaluated for different doping values, and the optimal efficiency for 2×1019 cm-3 doping concentration was obtained 40.05%. Simulation results show that inserting the p-AlGaN EBL layer to the cell structure increased the conduction band offset. This will block the flow of electrons to the p-region, consequently the solar cell efficiency will be increased due to the reducing of recombination and improving the hole collection.
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