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Volume 26 - ICOP & ICPET 2020
ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 377-380 |
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Rezaeian koochi S, Hatefi Kargan N, Daraei A. Schottky barrier photodetector with High Responsivity. ICOP & ICPET _ INPC _ ICOFS 2020; 26 :377-380
URL: http://opsi.ir/article-1-2064-en.html
URL: http://opsi.ir/article-1-2064-en.html
1- University of Sistan and Baluchestan
Abstract: (1565 Views)
In this Paper, a structure of the gallium arsenide photodetector with a gold metal Schottky junction has been simulated. A metal grating was placed on the semiconductor layer. Metal grids with very narrow slits and sufficient depth, increase the transmission resonance for wavelengths larger than the grating period. To increase the light absorption, the slits distance was adjusted to excite surface plasmons at the metal-semiconductor junction. excitation of surface plasmons at the metal-semiconductor junction, intensifies electromagnetic field at the junction. The photocurrent and responsivity of the photodetector were respectively 3.5 mA and 10.5 A/W at a bias voltage of 1V bias and at Wavelength of 850.
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