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Kalhor B, Kalhor D, Souri D. The Effect of Doping Concentration on the Output Optical Power of InGaN/GaN- Based Single Quantum-Well Light Emitting Diode . ICOP & ICPET _ INPC _ ICOFS 2018; 24 :201-204
URL: http://opsi.ir/article-1-1622-en.html
URL: http://opsi.ir/article-1-1622-en.html
1- Department of Physics, Faculty of Science, Malayer University
2- Faculty of Physics, Damghan University
2- Faculty of Physics, Damghan University
Abstract: (2038 Views)
The main advantage of using of quantum-wells structure in light-emitting diodes (LEDs) is that these structures boost the surface recombination of electrical charge carriers and then, increases their output optical power. Doping concentration is one of the most effective factors for the magnitude of the output optical power in these LEDs. In this study, a single quantum-well LED based on InGaN/GaN was simulated and the effect of doping concentration on its performance was investigated at fixed anode voltage by using Silvaco (ATLAS) software. Characteristics of LED have been achieved for different values of dopant content. The output optical power of the LED would begin to raise to an optimum point as a result of increase in doping concentration.
Keywords: recombination, output optical power, light-emitting diode(LED), quantum-well structures, doping concentration.
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