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ICOP & ICPET 2018, 24 - : 785-788 Back to browse issues page
Enhanced Open-circuit Voltage Using Al2O3 Inert Layer in Perovskite Solar Cells
Atefeh Ghorbani Koltapeh * 1, Farzad Mardekatani Asl 1, Bahram Abdollahi Nejand 1, Mohammad Kazem Moravvej-Farshi 1
1- School of Electrical and Computer Engineering, Tarbiat Modares University
Abstract:   (204 Views)
We investigate the effect of Al2O3 thin film deposited on an electron transfer layer (ETL: mp-TiO2 ) in the perovskite solar cells with the conventional structure of FTO/c-TiO2/mp-TiO2/CH3NH3PbI3/spiro-OMeTAD/Au. Using the rotational angular deposition method to deposit a nanolayer of insulating Al2O3 by the reactive magnetron sputtering (RMS), as a passivating layer, we compare the open-circuit voltage (VOC) of the perovskite solar cells with and without Al2O3. The comparison shows the passivated cells has a higher VOC. We observe the same effect for solar cells with and without the hole transfer layer (HTL: spiro-OMeTAD). The Al2O3 nanolayer decreases the recombination centers, leading to higher VOC and cell efficiency.
Keywords: reactive magnetron sputtering, passivation, Al2O3, recombination, perovskite solar cell
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Type of Study: Research | Subject: Special
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Ghorbani Koltapeh A, Mardekatani Asl F, Abdollahi Nejand B, Moravvej-Farshi M K. Enhanced Open-circuit Voltage Using Al2O3 Inert Layer in Perovskite Solar Cells. ICOP & ICPET. 2018; 24 :785-788
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انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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