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ICOP & ICPET 2018, 24 - : 29-32 Back to browse issues page
Design and Simulation of Graphene-Based Plasmonic Infrared Logic Gates with Hexagonal Boron Nitride Substrate
Rahim Borumandi * 1, Abbas Zarifkar 1, Mehdi Miri 1
1- Shiraz University
Abstract:   (545 Views)
- In this paper, design and simulation of AND and OR graphene plasmonic gates with hexagonal boron nitride substrate is presented. In these gates, surface plasmon polaritons are excited by a 40THz incoming wave with TM polarization while the chemical potential of graphene strips is tuned about 0.3ev. Utilizing of thin layers of hexagonal boron nitride instead of silicon dioxide as substrate allows less propagation loss of surface plasmon polaritons. Simulation results show that the extinction ratios for AND and OR gates with silicon dioxide substrate are 28dB and 25dB and the insertion losses are 14dB and 21dB, respectively, while the extinction ratios of the proposed AND and OR gates with hexagonal boron nitride substrate are 34dB and 29dB and the insertion losses are 9.7dB and 4.3dB, respectively. Our numerical results show considerable improvement in extinction ratio and insertion loss of the presented logic gates along with the advantage of smaller dimensions.
Keywords: Graphene, plasmonic, optical logic gates, hexagonal boron nitride
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Type of Study: Research | Subject: Special
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Borumandi R, Zarifkar A, Miri M. Design and Simulation of Graphene-Based Plasmonic Infrared Logic Gates with Hexagonal Boron Nitride Substrate. ICOP & ICPET. 2018; 24 :29-32
URL: http://opsi.ir/article-1-1513-en.html


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انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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