In this paper, the effect of sputtering of high-energy ions on the growth of amorphous carbon films is investigated. Therefore, the ion and neutral movements in the sheath are simulated and their energy at the moment of collision with the substrate is computed. The obtained energy is an input to the SRIM code being used to investigate the sputtering yield under different substrate biases and ionization degrees. Our results show that the sputtering of high-energy ions does not affect the films’ growth. It also decreases with increment of the substrate bias which is due to the transition toward ion implantation.

Keywords: Amorphous carbon films, Ion implantation, Sputtering, Substrate bias

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