A new structure for absorption enhancement in plasmonic MSM photodetector is presented. This structure contains a layer of SiO2 between gold and semiconductor layers. The SiO2 layer creates a more suitable path for light to penetrate under the metal layer, transmits the wave to both sides of the device, involves a greater part of semiconductor in electron-hole generation, and increases the coupling of light into the semiconductor. This construction is simulated using Lumerical FDTD. Absorption enhancement in this paper is 4 times greater than similar structures.
Jamalpoor K, Zarifkar A, Alighanbari A. A new approach for absorption enhancement in plasmonic photodetectors. ICOP & ICPET. 2015; 21 :1675-1678 URL: http://opsi.ir/article-1-791-en.html