[Home ] [Archive]   [ فارسی ]  
:: Volume 20 - ::
ICOP & ICPET 2014, 20 - : 45-48 Back to browse issues page
Theoretical Modeling of p-doping Effect on Relative Intensity Noise in 1.3µm InAs/GaAs Quantum Dot Lasers
Maryam Sanaee 1, Abbas Zarifkar Dr. * 1, Mohammad Hossein Sheikhi Dr.1, Hamid Nadgaran Dr.1
1- Shiraz University
Abstract:   (3384 Views)
In this paper we investigate theoretically the effect of p-doping on the relative intensity noise characteristics of 1.3µm InAs/GaAs quantum dot lasers. The rate equations for electrons and holes in three QDs' discrete levels, wetting and barrier states besides the rate of photons have been linearized in small signal regime around the operating point. Calculations demonstrate that p-doping would decrease the relative intensity noise of the quantum dot lasers. By increasing the injection current, the output power rises and the noise intensity reduces in p-doped QD laser which is in agreement with reported experimental results.
Keywords: Quantum dot lasers, P-doping, Nonlinear gain, Langevin sources, Relative intensity noise.
Full-Text [PDF 520 kb]   (953 Downloads)    
Type of Study: Research | Subject: Special
Send email to the article author

Add your comments about this article
Your username or Email:

CAPTCHA code


XML   Persian Abstract   Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Sanaee M, Zarifkar A, Sheikhi M H, Nadgaran H. Theoretical Modeling of p-doping Effect on Relative Intensity Noise in 1.3µm InAs/GaAs Quantum Dot Lasers. ICOP & ICPET. 2014; 20 :45-48
URL: http://opsi.ir/article-1-55-en.html


Volume 20 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
Persian site map - English site map - Created in 0.05 seconds with 30 queries by YEKTAWEB 3768