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ICOP & ICPET 2015, 21 - : 181-184 Back to browse issues page
Enhanced Optical Band Gap of Silicon Carbide Nanostructures by Surface Modification
Mohammad Mardani Mr1, Nastaran Mansour Mrs *2, Elham Sheykhi Mrs3, Mostafa Pouramini Mr2
1- MsC Student
2- Professor
3- PhD Student
Abstract:   (1611 Views)
In this research work, Si-O and C-O bonds are formed on the surface of the 50 nm sized silicon carbide (SiC) nanostructures using thermal annealing and chemical etching . Fourier transform infrared spectroscopy (FTIR) confirmed the surface bond formations on the SiC nanostructures. UV-visible absorption spectroscopy shows an increase in the optical band gap of the nanostructures about 0.58 eV due to C-O bond . The increase in the optical band gap about 0.87 eV is achieved when the nanostructures surface is modified by the both Si-O and C-O bonds. The observed optical properties corroborate the potential of the silicon carbide nanostructures in UV light emitting diodes and lasers.
Keywords: silicon carbide nanostructures, surface modification, C-O bond, Si-O bond, band gap enhancement
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Type of Study: Research | Subject: Special
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Mardani M, Mansour N, Sheykhi E, Pouramini M. Enhanced Optical Band Gap of Silicon Carbide Nanostructures by Surface Modification. ICOP & ICPET. 2015; 21 :181-184
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Volume 21 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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