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ICOP & ICPET 2015, 21 - : 1237-1240 Back to browse issues page
The investigation of the dark saturation current of GaN solar cells considering both Auger and SRH recombinations
Mina Piralaee Mrs * 1, Mina Helali Mrs2, Asghar Asgari Dr1
1- University of Tabriz
2- payam nour University of Urmia
Abstract:   (2004 Views)
In this paper the dark saturation current of p-n junction GaN solar cells with assuming two important types of recombination including Shockley-Read- Hall and Auger recombinations has been investigated. For this aim, with calculating the rate of net recombination of a p-n junction GaN solar cell under illumination and using of it in the minority carriers and continuity equations, an expression for the minority carrier's concentration in the base region has been obtained. Also the dependence of the dark saturation current density on different parameters such as dopancee of the base, the width of the base and etc. has been investigated.
Keywords: solar cell, dark saturation current, minority carriers.
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Type of Study: Research | Subject: Special
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Piralaee M, Helali M, Asgari A. The investigation of the dark saturation current of GaN solar cells considering both Auger and SRH recombinations. ICOP & ICPET. 2015; 21 :1237-1240
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Volume 21 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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