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ICOP & ICPET 2014, 20 - : 37-40 Back to browse issues page
Analysis of the Optical Properties of Self-Assembled Pyramidal InAs/GaAs Quantum Dot Using the Extended Hückel Tight-Binding Method
Setareh Sedaghat Mr.1, Masood Berahman Mr.1, Mohammad Hossein Sheikhi Dr.1, Abbas Zarifkar Dr. * 1
1- Shiraz University
Abstract:   (5231 Views)
Quantum-dot (QD) structures have the capability of the infrared intraband transitions because of their 3-dimensional confinement. In this paper, a self-assembled pyramidal InAs/GaAs QD is considered and the effects of the quantum dot geometry, such as the dot height and aspect ratio on the intraband transitions are theoretically studied by EHT formalism. The results show that QD size increase leads to considerable reduction of the beam absorption.
Keywords: Extended Hückel Tight-Binding, InAs/GaAs Quantum-Dot, Optical absorption coefficient.
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Type of Study: Research | Subject: Special
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Sedaghat S, Berahman M, Sheikhi M H, Zarifkar A. Analysis of the Optical Properties of Self-Assembled Pyramidal InAs/GaAs Quantum Dot Using the Extended Hückel Tight-Binding Method. ICOP & ICPET. 2014; 20 :37-40
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انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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