Abstract: (2509 Views)
In this paper a structure for optical electro-absorption modulator is proposed in which modulation depth is increased by exploiting multilayers of graphene to coat the silicon optical waveguide. Under incidence of photons with wavelength λ=1537 nm, with biasing voltage of graphene layers and changing the Fermi level, modulation depth reaches 9.2 dB and 13.13 dB in three and four layer-graphene structure respectively.
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