1- School of Electrical Engineering, Iran University of Science and Technology
Abstract: (2205 Views)
A new structure for the carrier depletion based silicon optical modulator is proposed with the extinction ratio of 7.81 dB and the low optical loss of 0.56 dB/mm at 9 V reverse bias. The modulator uses 100nm of heavily doped regions for each ohmic contact. The Modulator itself is designed with low impurity concentration doping profile in the active area as the phase shifter in order to reduce the optical loss. The eye diagram shows the jitter performance of 7.13 ps and the decision point of 22.07 ps.
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