Volume 22 -                   ICOP & ICPET _ INPC _ ICOFS 2016, 22 - : 200-203 | Back to browse issues page

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Investigation on structural, morphological and optical properties of WO3/WS2 compound semiconductor thin films
Roohallah Salamatizadeh * 1, Mehdi Adelifard1 , Seyed Ahmad Ketabi1
1- Damghan university
Abstract:   (2988 Views)

WO3/WS2 compound thin films were prepared on glass substrate using chemical spray pyrolysis and annealing process in the Argon and H2S atmosphere. Structural, morphological and optical properties of the layers were investigated by X-ray diffractometer (XRD), field effect scanning electron microscopy (FESEM) and UV.Vis spectrophotometer. WO3/WS2 thin films have monoclinic oxide and hexagonal sulfide phases and approximately homogeneous Surface. Absorption coefficient of the layers in the visible region are of order 104 cm-1 and direct band gap of oxide and sulfide phases were calculated about 3.22 and 2.49 eV, respectively

Keywords: tungsten oxide, tungsten sulfide, structural properties, optical properties
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Type of Study: Research | Subject: Special
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