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Showing 3 results for Hodaei

Arash Hodaei, Vahid Ahmadi, Gholamreza Abaeiani,
year 24, Issue 0 (3-2018)
Abstract

The effect of RW length and taper angle on the beam quality and threshold current density of a SQW Al0.07Ga0.93As 808 nm high power tapered laser diode is investigated by simulation. Results in an output optical power of 1 W shows that in taper angle of 3°, M2 factor is about 3 and in wider angles (4,5,6) ,in RW lengths of 500, 750 and 1000 μm, is increased with the slope of 0.21, 0.18 and 0.08 respectively. Threshold current density is linearly decreased in wider taper angles from 850 to 630 (A/cm2), from 730 to 570 (A/cm2) and from 520 to 330 (A/cm2) in laser diodes with RW lengths of 500, 750 and 1000 μm respectively.
Seyed Peyman Abbasi, Arash Hodaei,
year 27, Issue 2 (ICOP & ICPET 2021 2021)
Abstract

High power semiconductor laser modulation is of great practical importance. Extensive research has been done to produce high energy short pulses. In this study by using an asymmetric structure, the optical field is shifted to n-section and the internal loss of the laser is reduced. This reduction in loss, and also applying high refractive index layers in n-section and increasing photon lifetime, makes it possible to use the gain switching method to generate several picoseconds optical pulses in edge emitting lasers. In this study, by investigating the appropriate pulse function, the maximum current limit is investigated and finally a short pulse of 80 ps (FWHM) and optical power of 3.2 W is created.



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