Association Mission
The mission of the association is to advance the creation, communication and application of knowledge to benefit society and improve people's lives.
Membership
Contact Us
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:



pourasiab H, namdar A. The effect of position of the Defect layer on the Goos – Hanchen Shift in the 1D Photonic Crystals in the Presence of Metamaterial . ICOP & ICPET _ INPC _ ICOFS 2014; 20 :1321-1324
URL: http://opsi.ir/article-1-231-en.html
URL: http://opsi.ir/article-1-231-en.html
Abstract: (5658 Views)
Abstract- In this paper we study the effect of position of the defect layer on the Goos-Hanchen shift in the one-dimensional photonic crystal in the presence of metamaterial. We show that the Goos-Hanchen shift will be positive or negative depending on the excitation of the forward or backward surface waves. Also, we observe that the maximum Goos-Hanchen shift for different position of defect layer will take place in different incident angles of Gaussian beam. So that these angles in the case of forward ( backward) waves decrease (increase) from high( low) values toward the angle corresponding to without defect layer case by removing the defect layer from surface of crystal .
Send email to the article author
Rights and permissions | |
![]() |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. |